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SSM09N90GW
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
DESCRIPTION
The SSM09N90GW acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters and offline power supplies. The SSM09N90GW is in a TO-247 (TO-3P) package, which is widely used for commercial and industrial applications, where the greater pin spacing is needed to meet safety specifications. The through-hole package is suitable for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached.
900V 1.2 8.6A
Pb-free; RoHS-compliant TO-247
G D S
TO-247 (suffix W)
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID IDM PD EAS
IAS E AR
Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25C TC = 100C Pulsed drain current
1
Value 900 30 8.6 5 30 240 1.92
3
Units V V A A A W W/C mJ
A mJ
Total power dissipation, TC = 25C Linear derating factor Single pulse avalanche energy
Avalanche current Repetitive avalanche energy
92
5.2 8.6
TSTG TJ
Storage temperature range Operating junction temperature range
-55 to 150 -55 to 150
C C
THERMAL CHARACTERISTICS
Symbol
RJC RJA
Parameter
Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient
Value
0.52 40
Units
C/W C/W
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area. 2. Pulse width <300us, duty cycle <2%. 3. Starting Tj=25C, VDD=50V , L=6.8mH , RG=25 , IAS=5.2A.
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SSM09N90GW
ELECTRICAL CHARACTERISTICS
Symbol BVDSS Parameter Drain-source breakdown voltage
Breakdown voltage temperature coefficient
(at Tj = 25C, unless otherwise specified)
Test Conditions VGS=0V, ID=1mA Reference to 25C, ID=1mA VGS=10V, ID=4.5A Min. 900 Typ. 0.67 Max. Units 1.2 V V/C
BV DSS/Tj
RDS(ON)
Static drain-source on-resistance
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate threshold voltage Forward transconductance
VDS=VGS, ID=250uA VDS=10V, ID=4.5A
2 -
11.5 67.1 17 19.9 25.8 10.3 305 536 221 51
4 10 100 100 120 -
V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Drain-source leakage current
VDS=900V, VGS=0V
VDS=720V ,VGS=0V, Tj = 125C VGS=30V ID=8.6A VDS=540V VGS=10V VDS=450V ID=5A RG=10 , VGS=10V RD=90 VGS=0V VDS=25V f=1.0MHz
Gate-source leakage current Total gate charge
2
Gate-source charge Gate-drain ("Miller") charge Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
2
4087 6000
Source-Drain Diode
Symbol VSD IS I SM Parameter Forward voltage
2
Test Conditions IS=8.6A, VGS=0V
Min. -
Typ. -
Max. Units 1.5 V
Continuous source current ( body diode )
VD=VG=0V, VS=1.5V
-
8.6
3
A
A
Pulsed source current (body diode )
1
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150C. 2.Pulse width <300us, duty cycle <2%.
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SSM09N90GW
21 10
T C =25 C ID , Drain Current (A)
o
10V 5.5V
8
T C =150 o C
10V 5.0V 4.5V
14
ID , Drain Current (A)
6
5.0V
4
7
V GS = 4.0 V
2
V GS =10V
0 0 10 20 30 40 0 0 12 24 36
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.3
3
I D =4.5A V GS =10V Normalized BVDSS (V) Normalized RDS(ON)
1.1 2
0.9
1
0.7 -50 0 50 100 150
0 -50 0 50 100 150
T j , Junction Temperature (
o
C)
T j , Junction Temperature ( C )
o
Fig 3. Normalized BVDSS vs. Junction Temperature
100 4
Fig 4. Normalized On-Resistance vs. Junction Temperature
10
3
IS (A)
T j = 150 o C
T j = 25 o C
1
VGS(th) (V)
2 1
1.4 1.6
0.1
0 0.2 0.4 0.6 0.8 1 1.2
-50
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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SSM09N90GW
f=1.0MHz
14
10000
I D =8.6A
12
Ciss
VGS , Gate to Source Voltage (V)
10
V DS =180V V DS =360V V DS =540V
C (pF)
8
Coss
100
6
Crss
4
2
0 0 10 20 30 40 50 60 70 80 90
1 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10us
10
Normalized Thermal Response (Rthjc)
Duty Factor = 0.5
0.2
ID (A)
100us 1ms
1
0.1
0.1
0.05
PDM
0.02
t T
10ms T C =25 o C Single Pulse
0.1
0.01 Single Pulse
DC
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG
QG 10V QGS 10% VGS td(on) tr td(off) tf Charge Q QGD
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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SSM09N90GW
PHYSICAL DIMENSIONS - TO-247
E
A
SYMBOLS
Millimeters
MIN NOM MAX
L1
A A1
4.60 1.20 0.80 2.80 1.80 0.55 1.45 19.70 15.40 5.15 16.20 3.60 3.30
4.80 1.40 1.00 3.00 2.00 0.60 1.50 19.90 15.60 5.45 16.50 3.80 3.50
5.00 1.60 1.20 3.20 2.20 0.75 1.65 20.10 15.80 5.75 16.80 4.00 3.70
c1
D
b b1
b2
c c1
D E
L3
b1
b2 A1 L c
b
e
L L1 L3
1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions.
e
PART MARKING - TO-247
PACKING:
Moisture sensitivity level MSL3
1000pcs in tubes packed inside a moisture barrier bag (MBB).
09N90GW YWWSSS
PART NUMBER: 09N90GW = SSM09N90GW DATE/LOT CODE: Y = last digit of the year WW = work week (01 -> 52) SSS = lot code sequence
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
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